va type name 123 4 6 5 2002. 1. 7 1/3 semiconductor technical data KTC813U epitaxial planar npn transistor revision no : 0 tv tuner, uhf oscillator application. (common base) tv tuner, uhf converter application. (common base) features high transition frequency : f t =1500mhz (typ.). excellent h fe linearity. maximum rating (ta=25 1 ) dim millimeters a b d g us6 2.00 0.20 1.25 0.1 2.1 0.1 0.2+0.10/-0.05 0-0.1 0.9 0.1 0.65 0.15+0.1/-0.05 b1 h c t g 1 3 2 b b1 d a h t 6 4 c c a1 1.3 0.1 a1 5 + _ + _ + _ + _ + _ 1. q emitter 2. q base 3. q base 4. q collector 5. q emitter 6. q collector 1 1 1 2 2 2 electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =15v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =3v, i c =0 - - 1.0 a collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 15 - - v dc current gain h fe v ce =3v, i c =8ma 60 150 320 transition frequency f t v ce =10v, i c =8ma 1100 1500 - mhz collector output capacitance c ob v cb =10v, i e =2ma, f=1mhz - 0.9 1.3 pf collector-base time constant c c rbb? v cb =10v, i e =-8ma, f=30mhz - 7.0 12 ps characteristic symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 3 v base current i b 25 ma collector current i c 50 ma collector power dissipation p c * 200 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 1 q1 23 65 4 q2 equivalent circuit (top view) marking * total rating free datasheet http:///
2002. 1. 7 2/3 KTC813U revision no : 0 ie 0 input susceptance b (ms) output susceptance 0 oe 0 output conductance g (g ) (ms) oe oe y - f input susceptance b (ms) -100 ib 0 input conductance g (ms) ib ib y - f 0 input conductance g (ms) ie ie y - f f - i c collector current i (ma) 0.1 0.3 1 3 100 t transition frequency f (mhz) y - f re re reverse transfer conductance g (ms) -0.6 re b (ms) -6 forward transfer susceptance -120 fe -20 forward transfer conductance g (ms) fe fe y - f t c 10 30 50 300 500 1k 3k 5k 10k common emitter v =10v ta=25 c ce reverse transfer susceptance -0.5 -0.4 -0.3 -0.2 -0.1 0 -5 -4 -3 -2 -1 0 100mhz 200 400 600 800 900 -6ma -4ma i =-2ma e common emitter v =10v ta=25 c ce 4 8 12 16 20 24 28 4 8 12 16 20 common emitter v =10v ta=25 c ce 200 400 600 800 900 i =-2ma e 100mhz -4ma -6ma b (ms) 020406080100 -100 -80 -60 -40 -20 0 900 800 600 400 200 i =-2ma -4ma -6ma 100mhz e common emitter v =10v ta=25 c ce y - f ob ( ) b (b ) (ms) ob ob 0.4 0.8 1.2 1.6 2.0 2.4 1 2 3 4 5 6 900 800 600 400 200 100mhz -6ma -4ma i =-2ma e common emitter (common base) v =10v (v =10v) ta=25 c ce cb 20 40 60 80 100 120 -80 -60 -40 -20 0 common base v =10v ta=25 c cb i =-2ma e -4ma -6ma 100mhz 900 800 600 400 200
2002. 1. 7 3/3 KTC813U revision no : 0 y - f rb rb reverse transfer conductance g (ms) -1.2 reverse transfer susceptance -3.0 b (ms) rb fb b (ms) 0 forward transfer susceptance -100 forward transfer conductance g (ms) fb fb y - f -1.0 -0.8 -0.6 -0.4 -0.2 0 -2.5 -2.0 -1.5 -1.0 -0.5 0 common base v =10v ta=25 c cb 100mhz 200 400 600 800 900 i =-2ma -4ma -6ma e -80 -60 -40 -20 0 20 20 40 60 80 100 120 common base v =10v ta=25 c cb 100mhz -6ma -4ma i =-2ma e 200 400 600 800 900
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